Model/Brand/Package
Category/Description
Inventory
Price
Data
-
![]()
Category: MOSpipeDescription: N-Channel 40V (D-S) 200DEG.C MOSFET16805+$25.507250+$24.4171200+$23.8067500+$23.65411000+$23.50152500+$23.32715000+$23.21817500+$23.1091 -
![]()
Category: MOSpipeDescription: N-Channel 40V (D-S) 200DEG.C MOSFET81745+$25.507250+$24.4171200+$23.8067500+$23.65411000+$23.50152500+$23.32715000+$23.21817500+$23.1091 -
![]()
Category: MOSpipeDescription: MOSFET N-CH 40V 110A D2PAK92585+$27.888150+$26.6963200+$26.0289500+$25.86211000+$25.69522500+$25.50455000+$25.38537500+$25.2662 -
![]()
Category: JFETtransistorDescription: Trans JFET N-CH 3Pin TO-236881110+$1.078750+$1.0227100+$0.9828300+$0.9588500+$0.93481000+$0.91092500+$0.87495000+$0.8669 -
![]()
Category: MOSpipeDescription: VISHAY SQ2319ES-T1-GE3 Transistor, MOSFET, P-channel, -4.6 A, -40 V, 0.061 ohm, -10 V, -2 V75345+$3.237325+$2.997550+$2.8296100+$2.7577500+$2.70972500+$2.64985000+$2.625810000+$2.5898 -
![]()
Category: MOSpipeDescription: 60V, N-Channel 220MOHM 4.5V Rated MOSFET36445+$2.158725+$1.998850+$1.8868100+$1.8389500+$1.80692500+$1.76695000+$1.750910000+$1.7269 -
![]()
Category: MOSpipeDescription: N-CHANNEL 40V (D-S) MOSFET15195+$1.373025+$1.271350+$1.2001100+$1.1696500+$1.14922500+$1.12385000+$1.113610000+$1.0984 -
![]()
Category: Bipolar transistorDescription: Low saturation voltage PNP transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage PNP bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia44225+$2.546125+$2.357550+$2.2255100+$2.1689500+$2.13122500+$2.08405000+$2.065210000+$2.0369 -
![]()
Category: Schottky diodeDescription: Schottky barrier diode, 1A to 1.5A, Nexperia efficient ultra small thin surface mount package optimized for low forward voltage drop, high junction temperature, low capacitance, negligible power switching loss, low leakage current698920+$0.580550+$0.5375100+$0.5160300+$0.4988500+$0.48591000+$0.47735000+$0.468710000+$0.4601 -
![]()
Category: Schottky diodeDescription: Schottky barrier diode, 200mA to 500mA, Nexperia efficient ultra small thin surface mount package optimized for low forward voltage drop, high junction temperature, low capacitance, negligible power switching loss, low leakage current74445+$2.015625+$1.866350+$1.7617100+$1.7170500+$1.68712500+$1.64985000+$1.634810000+$1.6124 -
![]()
Category: Schottky diodeDescription: Schottky barrier diode, 200mA to 500mA, Nexperia efficient ultra small thin surface mount package optimized for low forward voltage drop, high junction temperature, low capacitance, negligible power switching loss, low leakage current9297 -
![]()
Category: Bipolar transistorDescription: Low saturation voltage NPN transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia49555+$2.300425+$2.130050+$2.0107100+$1.9596500+$1.92552500+$1.88295000+$1.865910000+$1.8403 -
![]()
Category: MOSpipeDescription: 60V, N-Channel 220MOHM 4.5V Rated MOSFET49345+$2.157325+$1.997550+$1.8856100+$1.8377500+$1.80572500+$1.76585000+$1.749810000+$1.7258 -
![]()
Category: MOSpipeDescription: N-CHANNEL 20V (D-S) MOSFET90925+$1.961625+$1.816350+$1.7145100+$1.6710500+$1.64192500+$1.60565000+$1.591010000+$1.5692 -
![]()
Category: MOSpipeDescription: VISHAY SI2351DS-T1-E3 Transistor, MOSFET, P-channel, -2.8 A, -20 V, 0.092 ohm, -4.5 V, -600 mV6391 -
![]()
Category: MOSpipeDescription: SI2304DS - NTrenchMOS channel intermediate level FET59755+$3.315625+$3.070050+$2.8981100+$2.8244500+$2.77532500+$2.71395000+$2.689310000+$2.6525 -
![]()
Category: MOSpipeDescription: NXP PMV230ENEA MOSFET Transistor, N Channel, 1.5A, 60V, 0.176Ω, 10V, 1.7V New84405+$1.363525+$1.262550+$1.1918100+$1.1615500+$1.14132500+$1.11615000+$1.106010000+$1.0908 -
![]()
Category: JFETtransistorDescription: •NChannel JFETs • Low on resistance: J108652210+$1.117850+$1.0598100+$1.0184300+$0.9936500+$0.96881000+$0.94392500+$0.90675000+$0.8984 -
![]()
Category: MOSpipeDescription: High side switch current conduction resistance: 0.9? Low threshold: -2.1V Fast switching speed: 18 nanoseconds Low input capacitance: 55 pF990120+$0.402350+$0.3725100+$0.3576300+$0.3457500+$0.33671000+$0.33085000+$0.324810000+$0.3189 -
![]()
Category: JFETtransistorDescription: NN-Channel JFETs for Channel JFETs359310+$1.167850+$1.1072100+$1.0640300+$1.0380500+$1.01211000+$0.98612500+$0.94725000+$0.9385 -
![]()
Category: JFETtransistorDescription: NN-Channel JFETs for Channel JFETs148110+$1.078750+$1.0227100+$0.9828300+$0.9588500+$0.93481000+$0.91092500+$0.87495000+$0.8669 -
![]()
Category: Zener diodeDescription: Zener diode 250mW, BZX84 series, NXP Semiconductors # # # Zener diode, Nexperia31661+$576.887910+$556.646250+$554.1160100+$551.5858150+$547.5374250+$543.9952500+$540.45291000+$536.4045 -
![]()
Category: Zener diodeDescription: Zener diode 250mW, BZX84 series, NXP Semiconductors # # # Zener diode, Nexperia935320+$0.413150+$0.3825100+$0.3672300+$0.3550500+$0.34581000+$0.33975000+$0.333510000+$0.3274 -
![]()
Category: Zener diodeDescription: Zener diode 250mW, BZX84 series, NXP Semiconductors # # # Zener diode, Nexperia54151+$676.430410+$652.696050+$649.7292100+$646.7624150+$642.0155250+$637.8620500+$633.70851000+$628.9616 -
![]()
Category: Zener diodeDescription: Zener diode 250mW, BZX84 series, NXP Semiconductors # # # Zener diode, Nexperia92085+$2.608225+$2.415050+$2.2798100+$2.2218500+$2.18322500+$2.13495000+$2.115510000+$2.0866
